| PART |
Description |
Maker |
| 2SA965 2SA965O 2SA965Y |
TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE. DRIVER STAGE AND POWER AMPLIFIER APPLICATIONS
TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 800MA I(C) | TO-92VAR
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
|
TOSHIBA[Toshiba Semiconductor]
|
| MMBA811C6 MMBAB11C6 |
PNP (DRIVER TRANSISTOR)
PNP EPITAXIAL SILICON TRANSISTOR
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| 2SA1225 2SA1225Y |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | TO-251AA
Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Driver Stage Amplifier Applications
|
TOSHIBA
|
| KTB1423 |
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING HAMMER DRIVER, PULSE MOTOR DRIVER)
|
KEC[KEC(Korea Electronics)]
|
| ADY27IV AL100 AL102 AL103 ASZ17 ASZ15 ASZ16 ASZ18 |
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 130V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 8A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 26V V(BR)CEO | 4A I(C) | TO-66VAR
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 600MA I(C) | TO-8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 4A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 20A I(C)
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 6A I(C) | TO-3
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-3
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 3.5A I(C) | TO-3 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 3.5AI（丙）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 3A条一c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 10A I(C) | TO-41 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 10A条一（c）|1
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 8A I(C) | TO-8 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 8A条一（c）|
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 3A I(C) | TO-3 晶体管|晶体管|进步党| 45V的五（巴西）总裁| 3A条一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) 晶体管|晶体管|进步党| 60V的五（巴西）总裁|5A一（c
|
Cypress Semiconductor, Corp.
Vicor, Corp.
Atmel, Corp.
Advanced Analogic Technologies, Inc.
EPCOS AG
|
| KRA564U KRA560U KRA563U |
Built in Bias Resistor
(KRA560U - KRA564U) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC Holdings
|
| KRA772E KRA766E KRA767E KRA768E KRA769E KRA771E KR |
Built in Bias Resistor
(KRA766E - KRA772E) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| KRC112M KRC111M KRC114M KRC110 KRC110M KRC113M |
EPITAXIAL PLANAR PNP TRANSISTOR (SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT) 外延平面PNP晶体管（开关，接口电路及驱动电路）
(KRC110M - KRC114M) EPITAXIAL PLANAR PNP TRANSISTOR
|
KEC Holdings
KEC[KEC(Korea Electronics)]
|
| PBSS5160DS PBSS5160DS115 PBSS5160DS-15 |
60 V, 1 A PNP/PNP low VCEsat (BISS) transistor
60 V, 1 A PNP low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
